학술논문
Depth profiles on ion implantation induced vacancy-type defects in GaAs and Si observed by slow positron.
Document Type
Article
Source
Subject
*ION implantation
*GALLIUM arsenide
*SILICON
*SEMICONDUCTORS
*
*
*
Language
ISSN
0003-6951
Abstract
Monoenergetic positrons with variable energies were used to study the depth distribution of implantation-induced vacancy-type defects in undoped GaAs and p-type Si. In the Si+-implanted GaAs, the concentration of vacancy-type defects decreased monotonically with increasing depth below the surface. In B+- and As+-implanted Si substrates, parabolic-type distributions of vacancy-type defects were observed. The present work demonstrates that the monoenergetic positron technique is a very powerful tool for the study of vacancy-type defects near surfaces in semiconductor processes. [ABSTRACT FROM AUTHOR]