학술논문
Interband transition energies and carrier distributions of Cdx Zn1-x Te/ZnTe quantum wires.
Document Type
Article
Author
Source
Subject
*NANOWIRES
*ATOMIC force microscopy
*PHOTOLUMINESCENCE
*FINITE differences
*CADMIUM
*ZINC
*TELLURIUM
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*
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Language
ISSN
0021-8979
Abstract
Interband transition energies and carrier distributions of the CdxZn1-xTe/ZnTe quantum wires (QWRs) were calculated by using a finite-difference method (FDM) taking into account shape-based strain effects. The shape of the CdxZn1-xTe/ZnTe QWRs was modeled to be approximately a half-ellipsoidal cylinder on the basis of the atomic force microscopy image. The excitonic peak energies corresponding to the ground electronic subband and the ground heavy-hole band (E1-HH1) at several temperatures, as determined from the FDM calculations taking into account strain effects, were in qualitatively reasonable agreement with those corresponding to the (E1-HH1) excitonic transition, as determined from the temperature-dependent photoluminescence spectra. [ABSTRACT FROM AUTHOR]