학술논문
Reverse-bias current reduction in low-temperature-annealed silicon pn junctions by ultraclean ion-implantation technology.
Document Type
Article
Author
Source
Subject
*ELECTRIC currents
*JUNCTION transistors
*ION implantation
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Language
ISSN
0021-8979
Abstract
Presents a study that analyzed the mechanism of reverse-bias current increase in low-temperature-annealed pn junction transistors using an ultraclean ion-implantation technology. Features of the ion-implantation system; Effect of stress compensation on the integrity of the transistor; Impact of contamination on the integrity of the junctions.