학술논문
Influence of the state of interfaces on the magnitude of the magnetoelectric effect in Co (Ni) films on PbZrTiO and GaAs substrates.
Document Type
Article
Author
Source
Subject
*MAGNETOELECTRIC effect
*CARBON monoxide
*GALLIUM arsenide
*LEAD alloys
*SINGLE crystals
*TEMPERATURE effect
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Language
ISSN
0020-1685
Abstract
Co (Ni) films on ceramic lead zirconate titanate (PbZrTiO) ferroelectric substrates and single-crystal GaAs piezoelectric substrates are shown to exhibit a giant magnetoelectric response, which reaches 200 V/A at room temperature and mechanical Q of at least 1000. These findings are interpreted in terms of the formation of stable interfaces in thin-film heterostructures owing to good adhesion of dissimilar materials to substrate surfaces after ion beam sputtering/deposition processing. This will allow one to extend the applicability of the magnetoelectric effect at room temperature to commercially available microelectronic materials and integrate related hybrid structures into single-chip signal generation/processing devices. [ABSTRACT FROM AUTHOR]