학술논문
Electron mobility in the inversion layers of fully depleted SOI films.
Document Type
Article
Author
Source
Subject
*ELECTRON mobility
*ELECTRIC conductivity
*ELECTRON transport
*ENERGY-band theory of solids
*THIN films
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Language
ISSN
1063-7826
Abstract
The dependences of the electron mobility μ in the inversion layers of fully depleted double-gate silicon-on-insulator (SOI) metal-oxide-semiconductor (MOS) transistors on the density N of induced charge carriers and temperature T are investigated at different states of the SOI film (inversion-accumulation) from the side of one of the gates. It is shown that at a high density of induced charge carriers of N > 6 × 10 cm the μeff(T) dependences allow the components of mobility μ that are related to scattering at surface phonons and from the film/insulator surface roughness to be distinguished. The μ( N ) dependences can be approximated by the power functions μ( N ) ∝ N . The exponents n in the dependences and the dominant mechanisms of scattering of electrons induced near the interface between the SOI film and buried oxide are determined for different N ranges and film states from the surface side. [ABSTRACT FROM AUTHOR]