부산대학교 도서관

The electron mobility µ in the accumulation mode is investigated for undepleted and fully depleted double-gate n- n- n silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistors (MOSFET). To determine the range of possible values of the mobility and the dominant scattering mechanisms in thin-film structures, it is proposed that the field dependence of the mobility µ be replaced with the dependence on the density N of induced charge carriers. It is shown that the dependences µ( N) can be approximated by the power functions µ( N) ∝ N, where the exponent n is determined by the chargecarrier scattering mechanism as in the mobility field dependence. The values of the exponent n in the dependences µ( N) are determined when the SOI-film mode near one of its surfaces varies from inversion to accumulation. The obtained results are explained from the viewpoint of the electron-density redistribution over the SOI-film thickness and changes in the scattering mechanisms. [ABSTRACT FROM AUTHOR]