학술논문
Influence of neutron irradiation on etching of SiC in KOH.
Document Type
Article
Author
Source
Subject
*NEUTRON irradiation
*IRRADIATION
*NUCLEAR reactions
*SILICON carbide
*SILICON compounds
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Language
ISSN
1063-7842
Abstract
The effect of reactor neutron irradiation on the etch rate of SiC in potassium hydroxide has been studied. In the case of high irradiation doses (10-10 cm), the etch rate of silicon carbide has been shown to drastically rise, especially in the [0001]Si direction. This considerably mitigates the orientation anisotropy of polar face etching. After high-temperature annealing (up to 1200-1400°C), a higher etch rate of irradiated crystals persists. The results have been explained by the high concentration of radiation-induced (partially clustered) defects they contain. [ABSTRACT FROM AUTHOR]