학술논문

Zinc oxide nanorods-based immuno-field-effect transistor for human serum albumin detection.
Document Type
Article
Source
Journal of Materials Science. Sep2021, Vol. 56 Issue 27, p15344-15353. 10p. 2 Diagrams, 2 Charts, 6 Graphs.
Subject
*SERUM albumin
*FOURIER transform infrared spectroscopy
*FIELD emission electron microscopy
*X-ray photoelectron spectroscopy
*FIELD-effect transistors
*TRANSISTORS
*INDIUM gallium zinc oxide
*ZINC oxide
Language
ISSN
0022-2461
Abstract
Physiological roles in human body system substantially supported by human serum albumin (HSA). Frequent monitoring of HSA level is vital in early diagnosis of HSA-related diseases. This work focuses on demonstrating field-effect transistor (FET)-based immunosensor utilizing high aspect ratio zinc oxide nanorods (ZnO NRs) as a transducer in quantifying HSA. The acetylacetonate-assisted hydrothermal method was used to synthesize ZnO NRs, and a standard photolithography process was applied to fabricate the FET device. The morphology and electrical evaluations of the ZnO NRs were performed using field emission scanning electron microscopy and current-voltage measurement system, respectively. The surface modification of the ZnO NRs was confirmed by X-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy. The detection mechanism is based on the covalent binding interactions between an antibody and HSA target that induced a change in the drain current (ID) of the fabricated biosensor. The biosensor exhibited a high sensitivity of 0.826 mA (g/ml)-1 with a LOD value of 9.81 ng/ml in a linear range between 10 ng/ml and 100 µg/ml. HSA was also successfully detected in the interference by other biomolecules in a real serum, indicating the capability of ZnO NRs-FET immunosensor for quantifying HSA in complex biological matrix. This biosensor also exhibits good stability after stored for 360 days. [ABSTRACT FROM AUTHOR]