부산대학교 도서관

Reflection x-ray pole figure analysis techniques were used to study the heteroepitaxial relationships of the cobalt germanide CoGe[sub 2] to GaAs(100). The alloy films were grown using the partially ionized beam deposition technique, in which low energy Ge[sup +] ions are employed to alter the heteroepitaxial orientation of the CoGe[sub 2] deposits. The CoGe[sub 2][001](100) GaAs[100](001) orientation, which has the smallest lattice mismatch, was found to occur for depositions performed at a substrate temperature around 280 °C and with ∼ 1200 eV Ge[sup +] ions. Lowering the substrate temperature or reducing the Ge[sup +] ion energy leads to CoGe[sub 2](100) orientation domination with CoGe[sub 2][100](010) GaAs[100](001) and CoGe[sub 2][100](001) GaAs[100](001). Substrate temperature alone was seen to produce only the CoGe[sub 2](100) orientation. For CoGe[sub 2](001) films, additional energy was required from Ge[sup +] ions in the evaporant stream. [ABSTRACT FROM AUTHOR]