부산대학교 도서관

Abstract: Fabrication of sintered undoped n-type Mg2Si, initiated from pre-synthesized all-molten polycrystalline Mg2Si powder, was carried out using a Plasma Activated Sintering technique. The thermoelectric properties were evaluated from room temperature up to 861K. The maximum dimensionless figure of merit was estimated to be 0.60 at 861K. For output power measurements, the length and cross-sectional area of Mg2Si elements equipped with Ni electrodes were varied from 6 to 15mm and 2×2 to 4×4mm2, respectively. For the 3×3×7.5mm3 element, the maximum output power density was 1.43Wcm-2 with the temperatures of the cool and hot sides being 373K and 873K (ΔT =500K), while the highest output power was 203mW for the sample of 4×4×7.5mm3 at ΔT =500K. The results of aging tests for 11,000h with the hot side at 873K and the cool side at 373K under atmospheric conditions showed that the fabricated device elements possess sufficient durability at high power-generation operating temperatures. [Copyright &y& Elsevier]