학술논문
Site-Controlled Growth of Single InP QDs.
Document Type
Article
Author
Source
Subject
*INDIUM gallium phosphide
*GALLIUM arsenide
*QUANTUM dots
*BIOCHEMICAL substrates
*LUMINESCENCE
*BUFFER layers
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Language
ISSN
1063-7826
Abstract
The MOVPE growth of InP/GaInP quantum dots (QDs) on GaAs substrate 'defects' formed by a focused beam of Ga ions is studied. It is shown that ordered arrays of QDs with a density of 0.25 (μm) can be obtained in the InP/GaInP system. It is demonstrated that effective luminescence can be obtained by using two QD sheets separated by a GaAs/GaInP buffer layer. [ABSTRACT FROM AUTHOR]