학술논문
Influence of impurity and phonon scattering effects in resonant tunneling structures.
Document Type
Article
Author
Source
Subject
*EPITAXY
*QUANTUM tunneling
*GALLIUM arsenide
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Language
ISSN
0021-8979
Abstract
Presents a study that examined the tunneling properties and their temperature variations of molecular beam epitaxy grown symmetric aluminum-arsenic/gallium arsenide/aluminum arsenic resonant tunneling diodes with thin barriers. Dependence of the measured peak and valley current densities on temperature; Development of a Monte Carlo simulation including impurity and optical-phonon scattering for the calculation of the current-voltage behavior of the double barrier structures.