학술논문
Raman scattering in polycrystalline silicon doped with boron.
Document Type
Article
Author
Source
Subject
*POLYCRYSTALLINE semiconductors
*SEMICONDUCTOR doping
*ION implantation
*BORON
*RAMAN effect
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Language
ISSN
0021-8979
Abstract
Presents a study which measured the Raman spectra of polycrystalline silicon doped with implanted boron before and after thermal annealing. Intensity ratio between the phonon mode; Raman spectra for polysilicon without ion implantation; Effects of annealing on the Raman spectra.