학술논문
Hybrid orientation technology and strain engineering for ultra-high speed MOSFETs.
Document Type
Article
Source
Subject
*COMPLEMENTARY metal oxide semiconductors
*SILICON nitride
*INTEGRATED circuits
*METAL-insulator transitions
*TRANSISTORS
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Language
ISSN
0250-4707
Abstract
We report here RF MOSFET performance in sub-45-nm hybrid orientation CMOS technology. Based on the combination of hybrid orientation technology (HOT) and process-induced local strain engineering, MOSFET RF performance is investigated using CAD (TCAD) technology. Transistor optimization on (100) substrate via silicon nitride (SiN) cap layer thickness for n-MOSFETs, Ge mole fraction optimization for p-MOSFETs on (110) substrates and channel length scaling have resulted in record RF performance, viz. the cut-off frequency, ${f_{\rm T}}$. [ABSTRACT FROM AUTHOR]