학술논문
Effect of gallium on the electrical properties and photoresponse of CuInGaSe films.
Document Type
Article
Author
Source
Subject
*COPPER indium selenide
*SEMICONDUCTOR films
*NITROGEN
*ENERGY bands
*BAND gaps
*SOLAR cells
*GALLIUM alloys
*
*
*
*
*
*
Language
ISSN
0020-1685
Abstract
Semiconducting films of CuInGaSe solid solutions have been produced on CdS by selenizing metallic layers in flowing nitrogen. We have optimized the film growth conditions and investigated the structure, electrical properties, energy band structure, and photoconversion quantum efficiency of the films. With increasing gallium content, the band gap of the CuInGaSe ( x = 0, 0.2, 0.25, 0.30) films increases, reaching 1.27 eV. The films are potentially attractive for use in high-efficiency solar cells. [ABSTRACT FROM AUTHOR]