학술논문
Raman-based mapping and depth-profiling of the relaxation state in amorphous silicon.
Document Type
Article
Author
Source
Subject
*AMORPHOUS silicon
*DEPTH profiling
*
Language
ISSN
0021-8979
Abstract
We show that the micro-scale variations in the relaxation state of amorphous silicon (a-Si) can be well-identified by Raman mapping over hundreds or thousands of μm2 in 1–2 h. Pure and relaxed a-Si is obtained by self-implantation in crystalline silicon (c-Si) followed by anneal at 500 °C. It is then locally re-implanted over micro-sized patterns to produce unrelaxed a-Si zones. Raman mappings are obtained by pointwise confocal μ-Raman and hyperspectral Raman imaging. We also measure the depth profiles of the relaxation state in re-implanted a-Si by scanning the edge of a re-implanted sample. We infer from the depth profiles that the minimal damage dose to fully de-relax a-Si is 0.04 displacements per atoms, which is an order of magnitude smaller than the fluence needed to fully amorphize c-Si. [ABSTRACT FROM AUTHOR]