학술논문
Near edge x-ray absorption fine structure characterization of polycrystalline GaN grown by...
Document Type
Article
Source
Subject
*GALLIUM nitride
*GALLIUM arsenide
*RAMAN spectroscopy
*SCIENTIFIC experimentation
*
*
*
Language
ISSN
0021-8979
Abstract
Investigates the phase composition and microcrystalline structure of thin gallium nitride (GaN) grown by nitridation of oriented gallium arsenide. Detection of GaN detected by in situ Raman spectroscopy; Investigation of the local structure and ordering of the nitrided layer by nitrogen K-edge NEXAFS; How the orientational ordering was probed.