학술논문
Tunneling through stacked InAs/InGaAs/InP self-assembled quantum dots in a magnetic field.
Document Type
Article
Author
Source
Subject
*QUANTUM dots
*QUANTUM electronics
*MAGNETIC fields
*QUANTUM tunneling
*ZEEMAN effect
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Language
ISSN
0021-8979
Abstract
We report results of an investigation of vertical transport in stacked InAs/InGaAs/InP self-assembled quantum dot multi-layers and show evidence of tunneling between quantum dot states in adjacent layers. In the presence of magnetic fields up to 12 T applied parallel to the current, tunneling through Zeeman-split quasi-zero dimensional states is observed. The difference in the g factor of two quantum dots in adjacent layers, which is due to the difference in confinement, is estimated from the data. The experimental value obtained for the difference in g factor is in good agreement with that obtained from a calculation of the quantum dots' energy levels in the presence of the magnetic field. [ABSTRACT FROM AUTHOR]