학술논문
Reduced temperature growth of crystalline 3C-SiC films on 6H-SiC by chemical vapor deposition from silacyclobutane.
Document Type
Article
Author
Source
Subject
*EPITAXY
*SPECTROPHOTOMETRY
*THIN films
*SEMICONDUCTORS
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Language
ISSN
0021-8979
Abstract
Provides information on a study which investigated 3C- on 6H-SiC (0001) epitaxial growth from the single-source organosilane precursor silacylobutane (c-C[sub3]H[sub6]SiH[sub2]). Use of spectrophotometry; Features of the 3C-SiC thin films determined using double crystal X-ray diffractometry; Semiconductor material for various high temperature and high power electron devices.