학술논문

Theoretical and experimental study of the longitudinal uniaxial stress dependence of I-V characteristics in GaAs-AlxGa1-xAs-GaAs heterojunction barriers.
Document Type
Article
Source
Journal of Applied Physics. 5/15/1990, Vol. 67 Issue 10, p6360. 8p. 2 Diagrams, 2 Charts, 11 Graphs.
Subject
*STRAINS & stresses (Mechanics)
*GALLIUM arsenide
*LONGITUDINAL method
Language
ISSN
0021-8979
Abstract
Presents a theoretical and experimental study of the longitudinal uniaxial stress dependence of I-V characteristics in GaAs-Al[subx]Ga[sub1-x]As-GaAs heterojunction barriers. Procedure to extract parameters for theoretical calculations; Dependence of the I-V characteristics on uniaxial stress in the direction perpendicular to the heterojunction plane; Usefulness of uniaxial stress in elucidating the transport mechanisms in heterojunction barriers.