부산대학교 도서관

The deposition of high-quality SiO films has been achieved through the use of both plasma-enhanced chemical vapor deposition (PE-CVD) and plasma-enhanced atomic layer deposition (PE-ALD) methods using HSi[N(CH)] as a Si precursor. We systematically investigated growth characteristics, chemical compositions, and electrical properties of PE-CVD SiO prepared under various deposition conditions. The SiO films prepared using PE-CVD showed high purity and good stoichiometry with a dielectric constant of ~4. In addition, the PE-ALD process of the SiO films exhibited well-saturated and almost linear growth characteristics of ~1.3 Å cycle without notable incubation cycles, producing pure SiO films. Electrical characterization of metal-oxide silicon capacitor structures prepared with each SiO film showed that PE-ALD SiO films had relatively lower leakage currents than PE-CVD SiO films. This might be a result of the saturated surface reaction mechanism of PE-ALD, which allows a smooth surface in comparison with PE-CVD method. In addition, the dielectric properties of both SiO films were further evaluated in the structures of In-Ga-Zn-O thin-film transistors, and they both showed good device performances in terms of high I − I ratios (>10) and low off-currents (<10 A). However, based on the negative bias stress reliability test, it was found that PE-ALD SiO showed better reliability against a negative V shift than PE-CVD SiO, which might also be understood from its smoother channel/insulator interface generation at the interface. [ABSTRACT FROM AUTHOR]