학술논문
Blueshift of bandgap energy and reduction of non-radiative defect density due to precise control of InAs-on-GaSb interface in type-II InAs/GaSb superlattice.
Document Type
Article
Author
Source
Subject
*BAND gaps
*INDIUM arsenide
*GALLIUM antimonide
*SUPERLATTICES
*PHOTOLUMINESCENCE
*MOLECULAR beam epitaxy
*SUBSTRATES (Materials science)
*FOURIER transform infrared spectroscopy
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Language
ISSN
0021-8979
Abstract
We have investigated the influence of As-soak parameters at InAs-on-GaSb interfaces on the structural and optical parameters of InAs/GaSb superlattices (SLs). The lattice-matched SLs were obtained for two sets of technological parameters. For a long As-soak time of 12.0 s and high V/III ratio of 10, the photoluminescence (PL) analysis indicates the presence of a non-radiative recombination channel. For a shorter time of 2.8 s and a reduced V/III ratio of 5.6, the PL excitation power dependence is close to that relevant for a clear excitonic recombination. The spectral blueshift of the bandgap energy of 23 meV was observed for SLs with GaAs-like interface thicknesses of 0.4 ML and 1.0 ML and other fixed parameters. [ABSTRACT FROM AUTHOR]