학술논문
Laser-diode arrays based on epitaxial integrated heterostructures with increased power and brightness of the pulse emission.
Document Type
Article
Author
Source
Subject
*INDIUM gallium arsenide
*SEMICONDUCTOR laser arrays
*EPITAXY
*HETEROSTRUCTURES
*MICROFABRICATION
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Language
ISSN
1063-7826
Abstract
The results of studying single laser diodes and arrays in the spectral range of 900-1060 nm, fabricated based on InGaAs/AlGaAs epitaxially integrated heterostructures are presented. It is shown that the use of InGaAs/AlGaAs epitaxially integrated heterostructures allows the development of laser emitters with increased power and brightness, operating in the short pulse mode. The results of studying the characteristics of laser-diode arrays (LDAs) fabricated using these heterostructures are presented. [ABSTRACT FROM AUTHOR]