학술논문
Growth Features and Phase Composition of Hf–Sc–O thin Films Synthesized by Atomic Layer Deposition.
Document Type
Article
Source
Subject
*ATOMIC layer deposition
*THIN films
*X-ray photoelectron spectroscopy
*SILICON wafers
*SILICON crystals
*SILICON nitride films
*
*
*
*
*
Language
ISSN
0022-4766
Abstract
The Hf–Sc–O films are synthesized by atomic layer deposition using hafnium tetrakis-diethylamide (Hf(N(C2H5)2)4, TDEAH), scandium tris-methylcyclopentadienyl (Sc(C5H4CH3)3), and water at 300 °C on (100) single crystal silicon wafers from SiOх oriented microrope arrays (OMRA). Samples are analyzed by a number of physicochemical techniques: single wave ellipsometry, X-ray photoelectron spectroscopy, X-ray diffraction, transmission and scanning electron microscopy. Growth per cycle values (a film thickness increase in one reaction step) for pure and mixed oxides are determined, phases formed in the films are characterized, the relationship between the surface morphology and the chemical composition is found, and the optical properties of the samples are investigated. The use of OMRA as wafers allows the reliable identification of the formation of an ordered δ-phase Hf3Sc4O12 of a rhombohedral structure type and space group . [ABSTRACT FROM AUTHOR]