학술논문
MBE-grown GaAs:Si/GaAs:Be tunnel diodes for multijunction solar cells.
Document Type
Article
Author
Source
Subject
*GALLIUM arsenide
*SILICON compounds
*TUNNEL diodes
*SOLAR cells
*MOLECULAR beam epitaxy
*HETEROSTRUCTURES
*CURRENT density (Electromagnetism)
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Language
ISSN
1063-7850
Abstract
We present the results of optimization of the design and molecular beam epitaxy (MBE) growth technology of N-AlGaAs:Si/ n-GaAs:Si/ p-GaAs:Be/ P-AlGaAs:Be heterostructures for tunnel diodes (TDs). The achieved maximum peak current density level ( J = 513 A/cm) allows these TDs to be used for cascade connections both in multijunction solar cells and in structures of tunnel-coupled laser diodes. The initial region of the J- U curve of TDs exhibits nonlinearity that is explained by a residual potential barrier left in the p- P- p isotype heterojunction (confining the active region of TD) as a result of non-optimum doping of AlGaAs alloy. [ABSTRACT FROM AUTHOR]