학술논문
Evaluation of Dissolved Oxygen Concentration in Silicon Wafers by Measuring Infrared Attenuated Total Reflection.
Document Type
Article
Author
Source
Subject
*ATTENUATED total reflectance
*SILICON wafers
*OXYGEN
*
*
Language
ISSN
0094-243X
Abstract
Dissolved oxygen concentration of silicon wafers were evaluated by measuring infrared absorption of dissolved oxygen in attenuated total reflection (ATR) spectra of silicon wafers and compared with transmission-based evaluation. ATR peak height and the correlation between ATR and transmission was significantly stronger after chemical-mechanical polishing of both sides of wafers to 450 ± 10 μm. The results also indicate that the quantitative evaluation of the oxygen concentration of thin silicon wafers can be done by ATR measurements with appropriate preprocessing. [ABSTRACT FROM AUTHOR]