학술논문
Resonant state due to Bi in the dilute bismide alloy GaAs1-x Bix .
Document Type
Article
Author
Source
Subject
*REFLECTANCE
*EXCITED states
*RESONANT states
*ABSORPTION spectra
*PUMP probe spectroscopy
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Language
ISSN
1098-0121
Abstract
It has been theoretically predicted that isolated Bi forms a resonant state in the valence band of the dilute bismide alloy, GaAS1-xBix. We present ultrafast pump-probe reflectivity measurements of this interesting alloy system, which provide experimental evidence for the resonant state. The reflectivity transients for pump/probe wavelengths λ ∼ 860-900 nm have negative amplitude, which we attribute to the absorption of the probe pulse by the pump induced carriers that are localized at the Bi-resonant state. Our measurements show that the lifetime of carriers localized at the resonant state is ∼200 ps at 10 K. [ABSTRACT FROM AUTHOR]