학술논문

Electrochromic properties of InON thin films prepared by DC magnetron sputtering.
Document Type
Article
Source
Applied Physics A: Materials Science & Processing. Mar2024, Vol. 130 Issue 3, p1-11. 11p.
Subject
*MAGNETRON sputtering
*THIN films
*DC sputtering
*SURFACE morphology
*MINIMAL surfaces
*THERMOCHROMISM
Language
ISSN
0947-8396
Abstract
To investigate the influence of surface morphology on the electrochromic (EC) properties of indium oxynitride (InON), thin films were deposited on indium-doped tin oxide substrates using direct current (DC) magnetron sputtering. A systematic assessment was conducted by varying the substrate temperature and bias voltage to evaluate their respective impacts on the surface morphology and EC properties of InON. It was observed that as the substrate temperature gradually increased, the optical modulation showed a trend of initial increase followed by a gradual decrease. This nuanced behavior highlights the sensitivity of InON films to variations in deposition conditions. Additionally, the application of bias voltage induced significant alterations in the film's surface morphology, particularly noticeable when a negative bias voltage was employed. This resulted in a decrease in the transmittance, revealing the profound impact of bias voltage on the EC behavior of InON films. The wavelength range of InON electrochromism was also intricately linked to surface morphology. Optimal EC performance was consistently achieved when the surface exhibited minimal roughness, uniform particle distribution, and uniform film growth. These findings emphasize the importance of meticulous control over deposition parameters to attain better EC properties in InON films. More importantly, the study establishes that the EC phenomenon in InON films is primarily driven by ion migration through voids caused by alternate surface adsorption. This mechanism is similar to the observed behavior in InN films, providing valuable insights into the underlying processes governing electrochromism in InON films. These findings contribute to a deeper understanding of the factors influencing EC behavior in InON films and pave the way for enhanced applications in EC devices. [ABSTRACT FROM AUTHOR]