부산대학교 도서관

This paper investigates behavior of drain bias stress and gate-drain bias stress under illumination for InGaZnO thin film transistors as the current-driver operated. Properties exhibit two-stage degradation behavior during drain bias stress. The photo-excited hole non-uniform trapping from illumination induces drain side barrier lowering and causes an apparent hump phenomenon of the subthreshold swing. However, the positive threshold voltage shift without a hump phenomenon after gate-drain bias stress is different degradation behaviors. It is reliant on whether or not an inversion layer exists in the channel. This work also employs capacitance-voltage measurement to further clarify the mechanism of degradation behaviors. [ABSTRACT FROM AUTHOR]