학술논문
Leti-UTSOI2.1: A Compact Model for UTBB-FDSOI Technologies—Part I: Interface Potentials Analytical Model.
Document Type
Article
Author
Source
Subject
*SILICON-on-insulator technology
*SEMICONDUCTOR devices
*POISSON'S equation
*HIGHER order transitions
*TRIGONOMETRIC functions
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Language
ISSN
0018-9383
Abstract
A detailed presentation of the latest version of the Leti-UTSOI compact model is provided. Leti-UTSOI2 is the first available model able to describe the behavior of low-doped ultrathin body and buried oxide fully depleted silicon-on-insulator transistors in all bias configurations, including strong forward back bias. In this part, a full analytical calculation of interface potentials, valid for all regimes of independent double-gate device operation, is detailed. This analytical computation, which is the heart of Leti-UTSOI2, provides explicit expressions for all quantities required to build dc and ac core models. [ABSTRACT FROM AUTHOR]