학술논문
Anomalous deposition rate dependence of hydrogenated amorphous silicon on substrate temperature.
Document Type
Article
Source
Subject
*HYDROGENATION
*SILICON
*AMORPHOUS substances
*
*
Language
ISSN
0021-8979
Abstract
Presents a study that investigated the deposition rate dependence of hydrogenated amorphous silicon prepared by capacitively coupled radio frequency glow discharge upon substrate temperature. Background on the required substrate temperature for high-quality hydrogenated amorphous silicon; Analysis of plasma emission intensity and rate of deposition; Implications of the results.