학술논문
Oxygen-Containing Radiation Defects in Si[sub 1 – ][sub x]Ge[sub x].
Document Type
Article
Author
Source
Subject
*OXYGEN
*SURFACE defects
*RADIATION
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*
Language
ISSN
1063-7826
Abstract
The processes of formation and annealing of radiation defects in Si[sub 1-x]Ge[sub x] samples irradiated with 4-MeV electrons were studied. It is shown that, in the range of Ge contents of 3.5-15 at. %, a reduction in the efficiency of formation of oxygen-containing defects (VO and VO[sub 2]) compared to that in silicon is observed. The existence of three types of VO centers, perturbed and unperturbed by neighboring Ge atoms, is detected in Si[sub 1-x]Ge[sub x]. [ABSTRACT FROM AUTHOR]