학술논문
Heteroepitaxial properties of Si1-x-yGexCy on Si(100) grown by combined ion- and molecular-beam...
Document Type
Article
Source
Subject
*EPITAXY
*SEMICONDUCTORS
*SILICON
*
*
Language
ISSN
0021-8979
Abstract
Investigates the heteroepitaxial properties of the ternary group-IV semiconductors on silicon (Si). Molecular-beam epitaxy; Measurement of carbon (C) fraction; Change in elasticity; Strain measurements; Onset of SiC precipitation; Surface roughness; Discussion of microstructure.