학술논문
Temperature and strain dependence of the roughening transition in III-V semiconductor and SiGe epitaxial growth.
Document Type
Article
Author
Source
Subject
*CURVES in engineering
*SEMICONDUCTORS
*EPITAXY
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Language
ISSN
0021-8979
Abstract
Deals with a study which investigated temperature and strain dependence of the roughening transition in III-V semiconductor and SiGe epitaxial growth. Structure of the shape of the transition curve for sufficiently large strain energy values; Way in which the asymptotic behavior in the zero strain energy regime can be reproduced; Capability of the transition curves.