학술논문
In-situ measurement of thickness-dependent Pendellösung oscillations from a precipitation process in silicon at 650 °C.
Document Type
Article
Source
Subject
Language
ISSN
1862-6351
Abstract
The time dependent agglomeration of oxygen in silicon at an annealing temperature of 650 °C is followed in-situ via the variation of the thickness-dependent Pendellösung fringes. The measurement of the 400-reflection of a wedge shaped sample with the characteristic tungsten Kα1-line at 59.31 keV allows to observe changes of the static Debye-Waller factor of about 0.001%. Within the model of spherical precipitates and the classical theory of diffusion-driven precipitation we determine from this a diffusion constant 4.7x10-15 cm²/s for oxygen in silicon at 650 °C which appears enhanced by a factor of 2.4 as compared to normal oxygen diffusion. (© 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [ABSTRACT FROM AUTHOR]