학술논문
Energies of the X- and L-valleys in In0.53 Ga0.47 As from electronic structure calculations.
Document Type
Article
Source
Subject
*ELECTRONIC structure
*INDIUM gallium arsenide
*SEMICONDUCTOR research
*METAL oxide semiconductors
*TRANSISTORS
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Language
ISSN
0021-8979
Abstract
Several theoretical electronic structure methods are applied to study the relative energies of the minima of the X- and L-conduction-band satellite valleys of InxGa1-xAs with x = 0.53. This III-V semiconductor is a contender as a replacement for silicon in high-performance n-type metal-oxide-semiconductor transistors. The energy of the low-lying valleys relative to the conduction-band edge governs the population of channel carriers as the transistor is brought into inversion, hence determining current drive and switching properties at gate voltages above threshold. The calculations indicate that the position of the L- and X-valley minima are ~1 eV and ~1.2 eV, respectively, higher in energy with respect to the conduction-band minimum at the Γ-point. [ABSTRACT FROM AUTHOR]