학술논문
Small-signal equivalent circuit model of GaN-based nanodiodes at low temperature including trap-related low frequency dispersion.
Document Type
Article
Source
Subject
*LOW temperatures
*SURFACE states
*DISPERSION (Chemistry)
*DIODES
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Language
ISSN
0021-8979
Abstract
The small-signal equivalent circuit of GaN-based self-switching diodes has been obtained, which apart from the intrinsic R ‖ C branch, generally used to describe the diode performance, needs new elements to describe the low-frequency dispersion of the impedance originated by the presence of surface and bulk traps. The proposed model allows us to reproduce not only the high-frequency results (extracted from S-parameter measurements in the 40 MHz–43.5 GHz range) at room temperature, but also the low-frequency impedance measurements (75 kHz–30 MHz) at cryogenic temperatures down to 70 K. These new elements are a self-inductance associated to the effect of surface states (typical of a device with a high surface-to-volume ratio) and an extra series R – C branch modeling the influence of the bulk traps. [ABSTRACT FROM AUTHOR]