부산대학교 도서관

Dislocations and grain boundariesare intrinsic topological defectsof large-scale polycrystalline samples of graphene. These structuralirregularities have been shown to strongly affect electronic transportin this material. Here, we report a systematic investigation of thetransmission of charge carriers across the grain-boundary defectsin polycrystalline graphene by means of the Landauer-Büttikerformalism within the tight-binding approximation. Calculations reveala strong suppression of transmission at low energies upon decreasingthe density of dislocations with the smallest Burgers vector b= (1,0). The observed transport anomaly is explained fromthe point of view of resonant backscattering due to localized statesof topological origin. These states are related to the gauge fieldassociated with all dislocations characterized by b=(n,m) with n– m≠3q(q∈ Z). Our work identifies animportant source of charge-carrier scattering caused by the topologicaldefects present in large-area graphene samples produced by chemicalvapor deposition. [ABSTRACT FROM AUTHOR]