부산대학교 도서관

Annealing of aluminum/amorphous silicon bilayers below the eutectic temperature of the aluminum/silicon system leads to an exchange of the layer positions and a concurrent crystallization of silicon (aluminum-induced layer exchange). This letter discusses a model for the self-limited suppression of nucleation during the process. This characteristic feature is the reason why large grain sizes can be obtained. In our experiments, we combine nucleation caused by supersaturation and undercooling. Si depletion regions around existing grains are made visible. These experiments give direct proof of the idea that the suppression of nucleation occurs by Si depletion in the aluminum-induced layer exchange process. [ABSTRACT FROM AUTHOR]