부산대학교 도서관

InP:Al was grown by the liquid phase epitaxy method on InP (100)substrates. X-ray diffraction confirmed the epitaxial growth along (100) of AlInP. Photoluminescence spectra showed the evident effect of Al content. Ferroelectric characterization of the sample revealed a clear hysteresis in its polarization-voltage curves. The remnant polarization of InP:Al amounts to 1.99 μC/cm2 at 300 Hz, and it decreases with increasing temperature in a continuous and diffusive manner. Resistance measurement demonstrated a maximum resistance at 160 °C, tentatively consistent with the transition temperature of remnant polarization. The ferroelectricity is accounted by the collective interaction between nuclei having the microscopic instability from the cation size difference in InP:Al. [ABSTRACT FROM AUTHOR]