학술논문
Band structures of AlAs, GaP, and SiGe alloys: A 30 k×p model.
Document Type
Article
Author
Source
Subject
*SEMICONDUCTORS
*GERMANIUM crystals
*CONDUCTION bands
*ALLOYS
*ELECTRIC conductivity
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Language
ISSN
0021-8979
Abstract
The band structure of indirect-band gap semiconductors (AlAs, GaP) as well as indirect-band gap alloys semiconductors (GeSi) is described theoretically by using a 30×30 k×p model including the d far-level contribution. For all materials investigated, the resulting electronic band structure parameters are in good agreement with experimental values. The method also provides a good description of the second conduction band which is useful for transport modeling. Finally, our results show that Luttinger parameters, the κ valence band parameter, and the effective masses in the X and L valleys are in good agreement with available experimental data. [ABSTRACT FROM AUTHOR]