학술논문
Molecular Beam Epitaxy of Mixed h-GaTe/m-GaTe Thin Films on GaAs(001) Substrates: Structural and Photoluminescence Properties.
Document Type
Article
Author
Source
Subject
*MOLECULAR beam epitaxy
*THIN films
*AUDITING standards
*PHOTOLUMINESCENCE
*GALLIUM arsenide
*X-ray powder diffraction
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Language
ISSN
1063-7761
Abstract
Thin GaTe films were grown by molecular beam epitaxy (MBE) on GaAs(001) substrates. X-ray powder diffraction confirmed the coexistence of the h- and m-GaTe phases in all grown layers. A quantitative correlation between the MBE growth conditions and the phase composition of the grown films is established, and the upper limit of the MBE growth temperature for thin GaTe/GaAs(001) films is experimentally determined. New data are presented confirming the defect-related origin of the broad emission line with an energy maximum of ~1.45–1.46 eV, which dominates the low-temperature photoluminescence spectra of the grown GaTe/GaAs(001) layers. [ABSTRACT FROM AUTHOR]