학술논문
Impurity enhancement of the 1.54-μm Er3+ luminescence in silicon.
Document Type
Article
Author
Source
Subject
*PHOTOLUMINESCENCE
*ERBIUM
*ION implantation
*SILICON
*
*
*
Language
ISSN
0021-8979
Abstract
Presents information on a study which defined the processing parameters which will optimize the photoluminescence intensity of erbium implanted in silicon. Methods; Results; Discussion.