학술논문
Photoelectric characteristics of silicon carbide-silicon structures grown by the atomic substitution method in a silicon crystal lattice.
Document Type
Article
Source
Subject
*PHOTOELECTRICITY
*SILICON carbide
*SILICON crystals
*ENERGY conversion
*HEART dilatation
*DIPOLE moments
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Language
ISSN
1063-7826
Abstract
Data obtained in an experimental study of the photoelectric characteristics of silicon-silicon carbide structures grown by the atomic substitution method on silicon (100) and (111) substrates are presented. It is found that the maximum sunlight conversion efficiency of a silicon-silicon carbide (silicon carbide-silicon) heterojunction is 5.4%. The theory of dilatation dipole formation upon synthesis by the atomic substitution method is used to account for the mechanism of electrical barrier formation at the silicon-silicon carbide interface. [ABSTRACT FROM AUTHOR]