학술논문
Polarization field screening in thick (0001) InGaN/GaN single quantum well light-emitting diodes.
Document Type
Article
Author
Source
Subject
*INDIUM gallium nitride
*QUANTUM wells
*ELECTRIC fields
*OPTICAL polarization
*LIGHT emitting diodes
*PHOTOLUMINESCENCE measurement
*SIMULATION methods & models
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Language
ISSN
0003-6951
Abstract
We demonstrate through simulation that complete screening of polarization-induced electric fields in c-plane InGaN/GaN quantum wells (QWs) is possible by equal n- and p-doping of 10 nm layers immediately adjacent to the QW at a level of 7 x 1019 cm-3. Single QW light-emitting diodes with varying QW thickness are grown using the simulated structure. Biased photoluminescence (PL) measurements show no wavelength shift, indicating complete screening of the polarization field. The behavior of PL peak intensity as a function of bias can be explained as a competition between radiative recombination and carrier escape through tunneling or thermionic emission. [ABSTRACT FROM AUTHOR]