학술논문
Extracting information from partially depleted Si detectors with digital sampling electronics.
Document Type
Article
Author
Source
Subject
*NUCLEAR fragmentation
*NEUTRON transmutation doping of semiconductors
*ISOTOPIC analysis
*DIGITAL electronics
*DILEPTON production
*DETECTORS
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Language
ISSN
2101-6275
Abstract
A study of the identification properties and of the energy response of a Si-Si-CsI(Tl) ΔE-E telescope exploiting a partially depleted second Si stage has been performed. Five different bias voltages have been applied to the second stage of the telescope, one corresponding tofull depletion, the others associated with a depleted layer ranging from 60% to 90% of the detector thickness. Fragment identification has been obtained using either the ΔE-E technique or the Pulse Shape Analysis (PSA). Charge collection efficiency has been evaluated. The ΔE-E performance is not affected by incomplete depletion. Isotopic separation capability improves at lower bias voltages with respect tofull depletion, though charge identification thresholds increase. [ABSTRACT FROM AUTHOR]