학술논문

X-ray conductivity of ZnSe single crystals.
Document Type
Article
Source
Semiconductors. May2016, Vol. 50 Issue 5, p579-585. 7p.
Subject
*SINGLE crystals
*IRRADIATION
*COULOMB functions
*CHARGE carriers
*SEMICONDUCTORS
Language
ISSN
1063-7826
Abstract
The experimental I- V and current-illuminance characteristics of the X-ray conductivity and X-ray luminescence of zinc-selenide single crystals feature a nonlinear shape. The performed theoretical analysis of the kinetics of the X-ray conductivity shows that even with the presence of shallow and deep traps for free charge carriers in a semiconductor sample, the integral characteristics of the X-ray conductivity (the current-illuminance and I- V dependences) should be linear. It is possible to assume that the nonlinearity experimentally obtained in the I- V and current-illuminance characteristics can be caused by features of the generation of free charge carriers upon X-ray irradiation, i.e., the generation of hundreds of thousands of free charge carriers of opposite sign in a local region with a diameter of <1 μm and Coulomb interaction between the free charge carriers of opposite signs. [ABSTRACT FROM AUTHOR]