부산대학교 도서관

Assuming the origination of stimulated Raman scattering (SRS) in Raman susceptibility, we obtain expressions for Raman gain coefficients (under steady-state and transient regimes) of semiconductor magnetoplasmas under various geometrical configurations. The threshold value of excitation intensity and most favourable value of pulse duration (above which transient Raman gain vanishes) are estimated. For numerical calculations, we consider n-InSb crystal at 77 K temperature as a Raman-active medium exposed to a frequency doubled pulsed CO 2 laser. The variation of Raman gain coefficients on doping concentration, magnetostatic field and its inclination, scattering angle and pump pulse duration have been explored in detail with an aim to determine suitable values of these controllable parameters to enhance Raman gain coefficients at lower threshold intensities and to establish the suitability of semiconductor magnetoplasmas as hosts for compression of scattered pulses and fabrication of efficient Raman amplifiers and oscillators based on Raman nonlinearities. [ABSTRACT FROM AUTHOR]