부산대학교 도서관

ScN in the rock salt structure is a well-investigated material due to its desirable properties like the high hardness or large thermal conductivity. Recent computations by Adamski et al. [Appl. Phys. Lett. 115, 232103 (2019)] showed that ScN/GaN heterostructures exhibit an outstanding polarization gradient which would be beneficial for polarization induced electron gases. The pseudobinary semiconductor Sc x Al 1 − x N, when maintaining the cubic rock salt structure, could be beneficial for tailoring the polarization gradient using the Sc dependency of material properties. The structural properties of rs-Sc x Al 1 − x N are not fully discovered yet, thus in this work, DC-magnetron sputtered cubic rock salt Sc x Al 1 − x N thin films with 0.55 < x < 1.00 were grown and analyzed on ScN(111)/Si(111). The epitaxial relation of ScN(111) thin films on the Si(111) substrate is determined to be ScN[110] ∥ Si[100]. Furthermore, concentration dependent properties like the lattice parameter of Sc x Al 1 − x N were measured [a(ScN) = 4.50 Å, a(Sc0.55Al0.45N) = 4.30 Å] and the stress σ within the layers was determined. The crystal quality was evaluated using ω -scans, revealing FWHM = 1.14 ° for Sc0.95Al0.05N. The diameters of the columns were determined by atomic force microscopy and scanning electron microscopy and they are range from 34 to 59 nm for 0.55 < x < 1.00. At x = 0.55 , Sc x Al 1 − x N columns in the hexagonal wurtzite as well as cubic rock salt structure were detected. This information about the structural specifications of Sc x Al 1 − x N in the rock salt structure forms the basis for further investigations and experimental confirmation of the electric properties of ScN/GaN heterostructures or even a Sc x Al 1 − x N/GaN based approach for improved structures for high-electron-mobility transistors. [ABSTRACT FROM AUTHOR]