학술논문
Deviations from Vegard’s law in semiconductor thin films measured with X-ray diffraction and Rutherford backscattering: The Ge1-y Sny and Ge1-x Six cases.
Document Type
Article
Source
Subject
*RUTHERFORD backscattering spectrometry
*SEMICONDUCTOR films
*THIN films
*EPITAXIAL layers
*X-ray diffraction
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Language
ISSN
0021-8979
Abstract
The compositional dependence of the lattice parameter in Ge1-ySny alloys has been determined from combined X-ray diffraction and Rutherford Backscattering (RBS) measurements of a large set of epitaxial films with compositions in the 0